Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst

摘要

A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.