发明名称 Circuits and method to protect a gate dielectric antifuse
摘要 According to embodiments of the present invention, an antifuse circuit is operated by coupling an elevated voltage to a first terminal of an antifuse, controlling current in the antifuse with a program driver circuit coupled to a second terminal of the antifuse, and shunting current around the antifuse with a bypass circuit coupled between the first terminal of the antifuse and the program driver circuit to protect the antifuse. The antifuse includes a layer of gate dielectric between the first terminal and the second terminal. The embodiments of the present invention protect a gate dielectric antifuse.
申请公布号 US6751150(B2) 申请公布日期 2004.06.15
申请号 US20020231756 申请日期 2002.08.29
申请人 MICRON TECHNOLOGY, INC. 发明人 MARR KENNETH W.;PORTER JOHN D.
分类号 G11C5/00;G11C7/00;G11C17/18;H01L23/525;H01L29/00;(IPC1-7):G11C7/00 主分类号 G11C5/00
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