发明名称 Process for producing macroscopic cavities beneath the surface of a silicon wafer
摘要 A silicon element having macrocavities beneath its exterior surface is fabricated by electrochemical etching of a p-type silicon wafer. Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.
申请公布号 US6750153(B2) 申请公布日期 2004.06.15
申请号 US20010001358 申请日期 2001.10.24
申请人 NANOSCIENCES CORPORATION 发明人 BEETZ, JR. CHARLES P.;BOERSTLER ROBERT W.
分类号 H01L;H01L21/00;H01L21/302;H01L21/3063;H01L21/308;H01L21/461;(IPC1-7):H01L21/302 主分类号 H01L
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