发明名称 |
Process for producing macroscopic cavities beneath the surface of a silicon wafer |
摘要 |
A silicon element having macrocavities beneath its exterior surface is fabricated by electrochemical etching of a p-type silicon wafer. Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.
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申请公布号 |
US6750153(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20010001358 |
申请日期 |
2001.10.24 |
申请人 |
NANOSCIENCES CORPORATION |
发明人 |
BEETZ, JR. CHARLES P.;BOERSTLER ROBERT W. |
分类号 |
H01L;H01L21/00;H01L21/302;H01L21/3063;H01L21/308;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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