发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes: a memory cell configured with two transistors and one capacitor; two word drivers for controlling two word lines alternately, the two word lines controlling reading/writing with respect to the memory cell; two address latch circuits for latching a first address signal to select one of the word drivers, the two address latch circuits being respectively provided upstream from the two word drivers; and an address decoder for decoding a second address signal to generate the first address signal. In this device, the address decoder supplies the first address signal in common to both of the two address latch circuits.
申请公布号 US6751154(B2) 申请公布日期 2004.06.15
申请号 US20030400043 申请日期 2003.03.26
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KURODA NAOKI
分类号 G11C11/408;G11C7/10;G11C7/22;G11C8/06;G11C8/16;G11C8/18;G11C11/405;G11C11/4076;(IPC1-7):G11C7/00 主分类号 G11C11/408
代理机构 代理人
主权项
地址