发明名称 |
Alignment-mark patterns defined on a stencil reticle and detectable, after lithographic transfer to a substrate, using an optical-based detector |
摘要 |
Alignment-mark patterns are disclosed that are defined on stencil reticles and that can be transferred lithographically from the reticle to a sensitized substrate using charged-particle-beam microlithography. The corresponding alignment marks as transferred to the substrate are detectable at high accuracy using an optical-based alignment-detection device (e.g., an FIA-based device). The transferred alignment marks can be used in place of alignment marks used in optical microlithography systems. An alignment-mark pattern as defined on a stencil reticle includes pattern elements that are split in any of various ways into respective pattern-element portions separated from each other on the membrane of the stencil reticle by "girders" (band-like membrane portions) that prevent the formation of islands in the stencil reticle and that prevent deformation of the pattern elements on the stencil reticle. |
申请公布号 |
US6750464(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20010997854 |
申请日期 |
2001.11.29 |
申请人 |
NIKON CORPORATION |
发明人 |
UDAGAWA JIN;HIRAYANAGI NORIYUKI |
分类号 |
G03F1/08;G03F1/42;G03F7/20;G03F9/00;H01J37/304;H01J37/305;H01L21/027;(IPC1-7):G01N21/86 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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