| 摘要 |
PROBLEM TO BE SOLVED: To provide a dresser for enabling manufacture of semiconductors, having high quality and yield by removing clogging of an abrasive cloth and stabilizing the polishing speed. SOLUTION: In this dresser of an abrasive cloth for a semiconductor substrate, one type of hard abrasive grain selected from cubic system boron nitride, boron carbide, silicon carbide and aluminum oxide provided with a film formed of at least one type material selected from titan, zirconium and chrome is brazed to a supporting member made of metal or/and alloy into a single layer by using alloy having the melting point of 600 deg.C to 1400 deg.C. This metallic film is preferably manufactured by vapor plating and has the thickness in the range of 0.1 to 10 μm, and the hard abrasive grains has the diameter of 30 μm or more and 300 μm or less. |
