TRENCH OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING TRENCH

摘要

PURPOSE: A trench of a semiconductor device is provided to prevent the edge of a sidewall of a trench from being dug in a wet-etch process by dry-etching a silicon nitride layer while using a photoresist layer pattern on a trench as a mask such that the photoresist layer pattern has a width greater than the trench. CONSTITUTION: The trench is formed as an isolation region in a semiconductor substrate(11), filled with an insulation material and protruding from the semiconductor substrate by a predetermined height. A hetero material of a predetermined width is formed on the outer surface of the sidewall of the trench and on the semiconductor substrate, made of a material different from the insulation material buried in the trench and having the same height as the insulation material buried in the trench.