SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to form a metal interconnection with a smaller width by overcoming the limit of a conventional photolithographic apparatus using an oxide layer. CONSTITUTION: A substrate(100) is prepared. The first interlayer dielectric(102) having a contact part(C) is formed on the substrate. A plug(104) is formed in the contact part. The second interlayer dielectric(106) is formed on the substrate, having a trench(T) to expose the plug. An oxide wall(108) is formed on the side surface of the trench. The trench including the oxide wall is filled with a metal interconnection(110).