MASK FOR FORMING FLOATING GATE OF FLASH MEMORY AND METHOD FOR FABRICATING FLASH MEMORY BY USING THE SAME

摘要

PURPOSE: A flash memory is provided to increase a gate capacitive coupling ratio by increasing the contact area between a floating gate and a control gate in fabricating a NAND-type flash memory. CONSTITUTION: Quartz is prepared. A plurality of line patterns are formed in the quartz, composed of a plurality of chrome patterns that are separated from each other by an interval of the first space. The line patterns are separated by the second space greater than the width of the first space.