METHOD FOR ELIMINATING PARTICLES OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for eliminating particles of a semiconductor device is provided to completely eliminate the particles, by wet-etching an oxide layer to remove the particles, by performing a CMP(chemical mechanical polishing) process to eliminate a flaw left on the oxide layer and by depositing an oxide layer to compensate for the eliminated thickness of the oxide layer. CONSTITUTION: The first oxide layer(2) of a desired thickness of an oxide layer is formed on a semiconductor substrate(1). The first oxide layer is wet-etched to eliminate the particles generated during a process for forming the first oxide layer. A CMP process is performed on the upper surface of the first oxide layer to eliminate the flaw after the particles are removed. The second oxide layer(3) is formed on the planarized first oxide layer.