| 摘要 |
PURPOSE: An MOS(Metal Oxide Semiconductor) transistor and a manufacturing method thereof are provided to be capable of improving the degree of integration. CONSTITUTION: An MOS transistor is provided with a semiconductor substrate(11), a trench formed in the predetermined portion of the semiconductor substrate, and a channel region(12) formed at the bottom portion of the trench. At this time, the trench has the same width as an active region. The channel region is made of silicon. The MOS transistor further includes a gate oxide layer(13) formed on the channel region, a source/drain region made of an SiGe layer(15) for partially filling the trench in order to define a gate hole, and a gate(18) for filling the gate hole. Preferably, the thickness of the channel region is in the range of 1000-3000 angstrom.
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