HETERO-JUNCTION BIPOLAR TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A HBT(hetero-junction bipolar transistor) is provided to embody low metal contact resistance and base resistance and improve a cut-off frequency and maximum resonant frequency by forming an outer base layer of a superhigh density through an ion implantation process. CONSTITUTION: A substrate(1) is prepared. A collector layer(3) is formed on the substrate. A base layer is formed on the collector layer. An emitter layer pattern is patterned on the base layer. An emitter metal pattern(6a) is formed on the emitter layer pattern. A base metal pattern(6b) is formed on the base layer, separated from the emitter metal pattern by a predetermined interval. An insulation sidewall(7a) is formed between the emitter metal pattern and the base metal pattern.