SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH IMPROVED ESD RESISTANCE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor IC(Integrated Circuit) device and a method of manufacturing the same are provided to improve the resistance of ESD(ElectroStatic Discharge) at a low cost in a short period by connecting each ground line of electrostatic breakdown protection circuits to an outer portion of the device. CONSTITUTION: A semiconductor IC device(1000) includes a digital circuit(1010) and an analog circuit(1050) integrated into the same semiconductor chip. The first electrostatic breakdown protection circuits(1022a,1022b) are connected with the digital circuit to protect the first electrostatic breakdown generated at the digital circuit due to the influence of an inputted digital signal. The second electrostatic breakdown protection circuits(1062a,1062b) are connected with the analog circuit to protect the second electrostatic breakdown generated at the analog circuit due to the influence of an inputted analog signal. The first and second ground lines of the first and second electrostatic breakdown protection circuits are connected to outer portions of the device.