Multi-layer structure production of semiconductor materials with different mesh parameters comprises epitaxy of thin film on support substrate and adhesion on target substrate

摘要

The production of a multi-layer structure of semiconductor materials comprises: (a) the production of a layer (110) incorporating a superficial thin film on a support substrate (100); (b) the creation of a fragilisation (sic) zone in the assembly (10) formed by the support substrate and the thin film deposited; (c) the adhesion of the assembly with a target substrate (20); (d) the detachment at the level of the fragilisation zone; and (e) the treatment of the surface of the structure thus obtained.