SEMICONDUCTOR MEMORY DEVICE AND ERASE METHOD OF MEMORY ARRAY, WHICH HAVE HIGH DEGREE OF FREEDOM

摘要

PURPOSE: A semiconductor memory device and an erase method of a memory array are provided which have high degree of freedom as performing data erase and re-programming. CONSTITUTION: The semiconductor memory device has a plurality of memory cell arrays. A plurality of nonvolatile memory cells(20) are arranged in a row direction and in a column direction respectively, and a plurality of word lines and a plurality of bit lines are arranged in a row direction and in a column direction respectively to select a memory cell or a memory cell group from the plurality of memory cells. One end of a variable resistor is connected to a drain of a selection transistor(21). Another end of the variable resistor or a source of the selection transistor are connected to the bit line along a column direction, and the others are connected to a source line in common. A gate of the selection transistor is connected to the word line in common. An erase circuit(13) erases information in the memory cell by setting an electric resistance of the variable resistor of an erase target memory cell as an erase state.