NONVOLATILE MEMORY CELL AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, IN WHICH ON STATE RESISTANCE OF SELECTION TRANSISTOR IS REDUCED

摘要

PURPOSE: A nonvolatile memory cell and a nonvolatile semiconductor memory device are provided, which reduces ON state resistance of a selection transistor of a memory cell without increasing the whole area of a memory array and also realizes a stable operation by accelerating and stabilizing a read operation of data stored in the memory cell. CONSTITUTION: A memory cell(1) has two variable resistors(2) and a selection transistor(3) constituted with a N type MOS transistor selecting two variable resistors. One end of each variable resistor is connected to a drain electrode of the selection transistor. Another ends of the variable resistor are connected to other bit lines(BL). A gate of the selection transistor is connected to a word line(WL) and a source of the selection transistor is connected to a source line(SL).