| 摘要 |
PURPOSE: A photo diode with pin structure is provided to control the lateral depletion degree of a junction layer and restrain the increase of capacitance and improve high speed operation characteristics. CONSTITUTION: A photo diode with pin structure is provided with the first conductive type semiconductor substrate(21), an intrinsic semiconductor layer(22) and the second conductive type semiconductor layer(23) sequentially formed on the substrate, the first insulating layer(24) having a window at its center portion for exposing the intrinsic semiconductor layer, the second conductive type active layer(25) formed on the exposed intrinsic semiconductor layer, and the first electrode(26) formed on the first insulating layer for contacting the active layer. The photo diode further includes the second insulating layer(28) and the second electrode(29) formed on the second conductive type semiconductor layer for applying the second polarity voltage in order to control the expansion degree of the active layer to the lateral direction.
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