Adhesion of two elements comprises nickel-silicon welding at low temperature, for encapsulation of components in integrated circuits and microelectromechanical systems

摘要

The adhesion of a first element (1), of which at least a part of the surface is coated with silicon, on a second element (2), of which at least a part of the surface is coated with nickel, incorporates an adhesion stage effected by NiSi welding at greater than 250degreesC, the rugosity between the two parts of the surface of the two elements being less than 1 micron. An Independent claim is also included for an integrated circuit incorporating two elements joined by NiSi welding.