COMPOSITION FOR FORMING POROUS INTERLAYER DIELECTRIC THIN FILM COMPRISING NOVEL PORE-GENERATING MATERIAL

摘要

PURPOSE: Provided is a composition for use in an interlayer dielectric thin film for semiconductors, which has a low dielectric constant(k) of 2.5 or less, low hygroscopic property and excellent mechanical properties. CONSTITUTION: The composition for forming a porous interlayer dielectric thin film comprises a pore-generating material containing a Gemini surfactant represented by formula 8, a quaternary alkylammonium salt represented by the formula of NL1L2L3L4X, in which N is a nitrogen atom, X is a halogen atom, and each of L1-L4 independently represents a C1-C30 alkyl, or a mixture thereof; a thermally stable organic or inorganic matrix precursor; and a solvent for dissolving them: wherein each of R1 and R2 independently represents methyl or ethyl; R3 is a C5-C40 alkyl; X is a halogen atom; each r is H, methyl or a C1-C10 alkoxy; j is 0 or 1; n is an integer of 1-12; m is an integer of 0-10.