发明名称 |
FLASH MEMORY DEVICE HAVING UNIFORM THRESHOLD VOLTAGE DISTRIBUTION WITHOUT UNDER-PROGRAMMED CELLS AND OVER-PROGRAMMED CELLS AND METHOD FOR VERIFYING THE SAME |
摘要 |
PURPOSE: A flash memory device having a uniform threshold voltage distribution without under-programmed cells and over-programmed cells and a method for verifying an under-program and an over-program are provided to improve the uniformity of a threshold voltage distribution by maintaining a program verification voltage in a constant level during the predetermined number of program cycle. CONSTITUTION: A memory cell array block(110) is provided with a plurality of flash memory cells. A program verification voltage generator(410) generates a program verification voltage for confirming whether the flash memory cells are programmed or not. A word line level selector(130) transmits the program verification voltage to a word line connected to control gates of the flash memory cells. A page buffer(420) includes a latch for storing data of the flash memory cells to reset the latch whenever the program verification voltage becomes a low level.
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申请公布号 |
KR20040049114(A) |
申请公布日期 |
2004.06.11 |
申请号 |
KR20020076955 |
申请日期 |
2002.12.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, GYEONG HAN;LEE, SEONG SU |
分类号 |
G11C16/02;G11C11/34;G11C16/04;G11C16/06;G11C16/12;G11C16/34;(IPC1-7):G11C16/12 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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