NONVOLATILE MEMORY DEVICE, IN WHICH OVONIC UNIFIED MEMORY IS USED

摘要

PURPOSE: A nonvolatile memory device is provided, which achieves large integration and high speed operation. CONSTITUTION: A memory array(7) comprises k word lines(71), n bit lines and n x k memory cells. Each memory cell comprises a variable resistor device(70) and a selection transistor(73). The selection transistor is a N type MOS transistor. A gate electrode of the selection transistor is connected to the word line. A source electrode of the selection transistor is connected to a source line(74). A drain electrode of the selection transistor is connected to one electrode of the variable resistor device, and another electrode of the variable resistor device is connected to the bit line.