发明名称 Thin film magnetic memory device with memory cell having magnetic tunnel junction
摘要 In this MRAM device, a memory block is divided into 4 regions, and 4 constant current circuits are respectively provided corresponding to the 4 regions. Bit line drivers select 2 bit lines from each of the 4 regions, that is, 8 bit lines are selected. Bit line drivers supply, to each bit line, an output current from the constant current circuit corresponding to that bit line. Accordingly, a write current flowing through a bit line can be stabilized, and stable data writing can be achieved.
申请公布号 US2004109348(A1) 申请公布日期 2004.06.10
申请号 US20030412589 申请日期 2003.04.14
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA
分类号 G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00;G11C11/14 主分类号 G11C11/15
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