发明名称 Atomic layer deposition apparatus and method for preventing generation of solids in exhaust path
摘要 Provided is an atomic layer deposition (ALD) apparatus in which the generation of powders is suppressed by providing a largely dedicated exhaust path for each of the reactants utilized in the ALD process. The ALD apparatus includes a reactor in which an ALD process is performed on a wafer using two or more types of reactants; reactant suppliers, each of which alternately supplies a different reactant to the reactor; and an exhaust path for each type of reactant so that the non-reacted portion of the reactants removed from the reaction chamber do not mix and react in the exhaust path.
申请公布号 US2004107897(A1) 申请公布日期 2004.06.10
申请号 US20030640244 申请日期 2003.08.14
申请人 LEE SEUNG-HWAN;CHU KANG-SOO;LEE JOO-WON;PARK JAE-EUN;YANG JONG-HO 发明人 LEE SEUNG-HWAN;CHU KANG-SOO;LEE JOO-WON;PARK JAE-EUN;YANG JONG-HO
分类号 C23C14/54;C23C14/24;C23C16/44;C23C16/455;C30B25/14;H01L21/20;H01L21/205;(IPC1-7):C30B1/00 主分类号 C23C14/54
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