发明名称 TRANSFER METHOD FOR THIN-FILM DEVICE
摘要 PROBLEM TO BE SOLVED: To conform the lamination relation of a transferred layer to a substrate used when manufacturing the transferred layer including a thin-film device with the relation of the transferred layer to a transfer destination to which the transferred layer is transferred. SOLUTION: A first isolation layer is set up on a substrate, and a thin-film device 140 such as a TFT and the like is formed on that substrate. After the thin-film device 140 is formed, the thin-film device 140 is joined to a primary transfer destination 180 via a second isolation layer 160 composed of water soluble adhesive, organic solvent soluble adhesive, or adhesive that has a stripping action through heating or ultraviolet irradiation, and then, a laser beam is projected from the back of the substrate. This causes a stripping at the first isolation layer which releases the thin-film device 140 from the substrate. Further, an adhesive layer 190 is used at the bottom surface of the thin-film device 140 to join it to a secondary transfer destination 200. After that, the primary transfer destination 180 is removed at the secondary isolation layer 160 as a boundary. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004165679(A) 申请公布日期 2004.06.10
申请号 JP20030410773 申请日期 2003.12.09
申请人 SEIKO EPSON CORP 发明人 INOUE SATOSHI;SHIMODA TATSUYA
分类号 G02F1/1333;G02F1/136;H01L21/02;H01L21/336;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):H01L27/12;G02F1/133 主分类号 G02F1/1333
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