| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP device which can accurately detect a polishing end-point even in a CMP process in flattening of an insulating film and STI formation, a CMP method, a semiconductor device and its manufacturing method. <P>SOLUTION: The CMP polishing method carries out polishing by using a CMP device 10 having a polishing end-point detection mechanism which detects the polishing end-point of a wafer 14. The CMP device 10 has a turn table 11, a polishing cloth 13 which is put on the turn table and carries out polishing while pressing the wafer 14, a light emitting element 32, and a photosensitive element. The polishing end-point is detected by rotating the turn table 11, dropping slurry on the polishing cloth 13, irradiating a polishing surface of the wafer 14 with multiwavelength light 34 emitted by the light emitting element 32, while carrying out polishing by pressing the wafer 14 to the polishing cloth 13 and receiving multiwavelength light reflected by the polishing surface by the photosensitive element. <P>COPYRIGHT: (C)2004,JPO |
