| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To stably manufacture granular silicon crystal of high quality excellent in crystallinity and open voltage property at a low cost excellent in mass productivity. <P>SOLUTION: The granular silicon crystal is manufactured by heating granular silicon in an atmospheric gas containing oxygen gas and nitrogen gas, which are reactive gases, forming a silicon compound coating film containing the above gas components on the surface of the granular silicon, melting the silicon inside the coating film, and then lowering the temperature to solidify and crystallize, where the granular silicon is annealed at 950-1,300°C for 10-180 minutes before the granular silicon is melted. <P>COPYRIGHT: (C)2004,JPO</p> |
