| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an active matrix display device in which thin-film transistors having characteristics needed in a pixel matrix part and a peripheral driving circuit part are selectively arranged. SOLUTION: The manufacturing method for an active matrix display device is arranged with, on the same substrate, a first N channel thin-film transistor of the pixel matrix part having a source region, a drain region, a channel region, and a low-concentration impurity region; a second N channel thin-film transistor of the peripheral driving circuit having a source region, a drain region, a channel region, and a low-concentration impurity region; and a P channel thin-film transistor of the peripheral driving circuit part having a source region, drain region, and a channel region. Thus, it is possible to integrate thin-film transistors having different characteristics onto the same substrate. COPYRIGHT: (C)2004,JPO |
