Ta SPUTTERING TARGET AND ITS PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method whereby a Ta sputtering target with a fine and uniform crystal particle size and excellent characteristics is stably produced by improving and devising its forging step and heat treatment step. SOLUTION: In the method for producing a sputtering target by subjecting a melt-cast Ta ingot or billet to forging, annealing, rolling, etc., the ingot or billet is subjected to recrystallization annealing at 1,373K-1,673K after subjected to the forging. COPYRIGHT: (C)2004,JPO