| 摘要 |
Antireflective structures comprise a metal silicon nitride composition in a layer that is superposed upon a layer to be patterned that would otherwise cause destructive reflectivity during photoresist patterning. The antireflective structure has the ability to absorb light used during photoresist patterning. The antireflective structure also has the ability to scatter unabsorbed light into patterns and intensities that are ineffective to photoresist material exposed to the patterns and intensities. Preferred antireflective structures comprise a semiconductor substrate having thereon at least one layer of a silicon-containing metal or silicon-containing metal nitride. One preferred material for the inventive antireflective layer includes metal silicon nitride ternary compounds of the general formula MxSiyNz wherein M is at least one transition metal, x is less than y, and z is in a range from about 0 to about 5y. Composite antireflective layers made of metal silicide binary compounds or metal silicon nitride ternary compounds may also be fashioned depending upon a specific application.
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