| 摘要 |
A charge trapping device, and a method of forming the same is disclosed. Charge traps are optimally distributed through a trapping region based on controlling various conventional processing operations, such as an implant, an anneal, an insulator film deposition, and the like. In some embodiments, FETs can be configured to include a negative differential resistance (NDR) characteristic when they utilize a particular charge trap energy and distribution.
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