发明名称 Methods for forming copper interconnect structures by co-plating of noble metals and structures formed thereby
摘要 A method of forming a copper interconnect, comprising forming an opening in a dielectric layer disposed on a substrate, forming a barrier layer over the opening, forming a seed layer over the metal layer, and forming a copper-noble metal alloy layer by electroplating and/or electroless deposition on the seed layer. The copper-noble metal alloy improves the electrical characteristics and reliability of the copper interconnect.
申请公布号 US2004108217(A1) 申请公布日期 2004.06.10
申请号 US20020313760 申请日期 2002.12.05
申请人 DUBIN VALERY M. 发明人 DUBIN VALERY M.
分类号 C23C18/48;C25D3/58;C25D7/12;(IPC1-7):C25D5/02;C25D3/38 主分类号 C23C18/48
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