| 摘要 |
PROBLEM TO BE SOLVED: To provide a BYT thin film made by doping BTO with yttrium and to provide a method for producing the same. SOLUTION: The BYT thin film having a composition of Bi<SB>4-x</SB>Y<SB>x</SB>Ti<SB>3</SB>O<SB>12</SB>is improved in a polarization value and electrical fatigue properties, has excellent ferromagnetic properties. It is therefore usefully used as e.g., an FRAM (ferroelectric random access memory) element having a high speed, a large capacity, a low electric consumption, and nonvolatile properties. COPYRIGHT: (C)2004,JPO |
