发明名称 |
BORON PHOSPHIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF AND LIGHT-EMITTING DIODE |
摘要 |
A boron phosphide-based semiconductor device having a junction structure of a Group-III nitride semiconductor layer and a boron phosphide layer with excellent device properties is provided. The boron phosphide-based compound semiconductor device has a heterojunction structure comprising a Group-III nitride semiconductor layer and a boron phosphide layer, wherein the surface of the Group-III nitride semiconductor layer has (0.0.0.1.) crystal plane, and the boron phosphide layer is a {111}-boron phosphide layer having a {111} crystal plane stacked on the (0.0.0.1.) crystal plane of the Group-III nitride semiconductor layer in parallel to the (0.0.0.1.) crystal plane. |
申请公布号 |
WO2004049451(A2) |
申请公布日期 |
2004.06.10 |
申请号 |
WO2003JP15180 |
申请日期 |
2003.11.27 |
申请人 |
SHOWA DENKO K.K.;UDAGAWA, TAKASHI |
发明人 |
UDAGAWA, TAKASHI |
分类号 |
H01L21/205;H01L29/04;H01L29/20;H01L29/205;H01L33/16;H01L33/30;H01L33/32 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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