METHOD OF PATTERN FORMATION USING ULTRAHIGH HEAT RESISTANT POSITIVE PHOTOSENSITIVE COMPOSITION

摘要

In a process in which it is demanded for a photoresist pattern to have high heat resistance, for example, production of a TFT active matrix substrate, an ultrahigh heat resistant positive pattern is formed with the use of a positive photosensitive composition according to the following method of pattern formation. The method of pattern formation comprises the step of coating a substrate with a photosensitive composition comprising an alkali soluble resin (a), a photosensitive agent having a quinonediazido group (b), a photo-acid generator (c), a crosslinking agent (d) and a solvent (e) and exposing the coating to light through a mask; the step of removing exposed portions by development to thereby form a positive image; the step of effecting overall exposure of the formed positive image to light; and optionally the step of post baking. When a 1,2-naphthoquinonediazide-4-sulfonyl compound is used as the photosensitive agent having a quinonediazido group, this compound also acts as the photo-acid generator, so that the above component (c) can be omitted.