PIN DIODES WHICH ARE MADE FROM POLYCRYSTALLINE HETEROSTRUCTURE MATERIALS, PHASE-SHIFTING PANEL AND ANTENNA COMPRISING PIN DIODES

摘要

The invention relates to a PIN-type diode with heterostructures based on semiconductor materials comprising at least one first material which is in contact with a second material which is in turn in contact with a third material. The invention is characterised in that the first material is n- or p-doped Si1-z-uGezCu-type polycrystalline, the second material is Sil-x-yGexCy-type polycrystalline, the third material is Si1-t-vGetCv-type polycrystalline, p or n doped respectively with x,y,z,t,u,v mole fractions, the first material being different from the second material and/or the second material being different from the third material, such as to create at least one heterostructure. The invention also relates to a phase-shifting panel employing the inventive diodes. The invention is suitable for antennae with electronic misalignment.