| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-frequency module substrate in which the characteristics of a semiconductor element for high frequency amplification can be adjusted. <P>SOLUTION: The high-frequency module substrate is provided with: a frequency divider circuit DIP01; switch circuits SW01, SW02; a plurality of semiconductor elements AMP011-013, 021-023 for high frequency amplification; and couplers COP01, COP02 for monitoring the outputs of the semiconductor elements for high frequency amplification, capacitors C011-023 are connected between at least one of DC voltage supply bias lines BL011-023 connected to the semiconductor elements for high frequency amplification and a ground and further, inductors L011-L023 are connected between the capacitors C011-023 and the ground. Otherwise, low-capacitance capacitors CL011-CL023 are connected between at least one of the DC voltage supply bias lines BL011-023 and the ground. <P>COPYRIGHT: (C)2004,JPO</p> |
