| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate with an ITO transparent conductive film with small increase and dispersion of surface resistance caused by baking of a porous layer made of a metal oxide semiconductor, which can well be used for a dye sensitizing solar battery. <P>SOLUTION: The ITO transparent conductive film is formed on the substrate by an activation evaporation method using a pressure gradient type plasma gun, with a thickness of the film of 100 to 450 nm and a surface resistance of the film after deposition of 3 to 10 Ω/SQUARE. Further, at the X-ray diffraction of the ITO transparent conductive film, a ratio of diffraction intensity I(222)/I(400) is not less than 3.0, wherein, I(222) is a diffraction intensity at 2θ=30.1° as a center, and I(400) is a diffraction intensity at 2θ=35.1° as a center. <P>COPYRIGHT: (C)2004,JPO |
