| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser diode of high output and a small working current by restraining an increase of a laser working current caused by inner loss due to optical absorption in a contact layer and obtaining electrical contact of a low resistance. SOLUTION: The semiconductor laser diode of an edge face light emission type has an n-type GaAs substrate 101, a first clad layer 103 formed of n-type AlGaInP formed on the substrate, an active layer 104 formed on the first clad layer, a second clad layer 105 formed of p-type AlGaInP formed on the active layer, and a p-type contact layer 106 formed on the second clad layer. In the semiconductor laser diode, the p-type contact layer 106 is formed of GaP. COPYRIGHT: (C)2004,JPO
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