| 摘要 |
PROBLEM TO BE SOLVED: To improve deterioration of short channel characteristics peculiar to an MONOS memory cell transistor or an erasing speed by thinning an oxide film after gating. SOLUTION: In an MONOS memory, a first insulation film 4 of an ONO laminate film of the cell transistor is composed of a silicon oxide film or a silicon oxide nitride film having oxygen compositions more than a charge storage layer 5. A second insulation layer (top insulation layer) 6 of the ONO laminate film is composed of a silicon oxide film, a silicon oxide nitride film having oxygen compositions more than a charge storage layer, Al<SB>2</SB>O<SB>3</SB>film, ZrSiO film, HfSiO film, HfSiON film, ZrSiON film, or laminate film thereof. In a gate sidewall insulation film 13, its portion in contact with a gate electrode 8 is composed of a silicon oxide film or a silicon oxide nitride film formed by oxidizing or oxidizing and nitriding the gate electrode including a silicon and thickness (b) on the gate electrode sidewall is less than thickness (a) of the top insulation film in the lower portion of the center of the gate electrode. COPYRIGHT: (C)2004,JPO
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