| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growing process of a compound semiconductor capable of producing a compound semiconductor crystal having a good crystal quality. SOLUTION: The process for epitaxially growing a III-V compound semiconductor containing nitride in a group V element by metal organic vapor phase epitaxy using a nitride material comprises a step for supplying the nitride material to a reaction chamber before a material of at least group III element is supplied thereto, and starting supply of the material of group III element to the reaction chamber upon elapsing a given period T1 after the nitride material is supplied to the reaction chamber. COPYRIGHT: (C)2004,JPO
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