| 摘要 |
A sensor for a magnetic random-access memory (MRAM) of an embodiment of the invention is disclosed that comprises an amplifier having at least two inputs and at least two outputs. The inputs are coupled to a magnetic storage element of the MRAM having a resistance corresponding to a value stored thereby and the outputs provide an output voltage corresponding to the resistance of the magnetic storage element. The sensor comprises a chopper switch coupled between one input of the amplifier and the magnetic storage element, a chopper switch coupled between another input of the amplifier and the magnetic storage element, and a chopper switch coupled between the outputs of the amplifier.
|
