发明名称 Semiconductor device
摘要 A semiconductor device includes a semiconductor substrate having one principal plane on which a plurality of electrodes are formed. A film which is made of polymer with a low dielectric constant is formed over the gate and drain electrodes so as to insulate the gate and drain electrodes from the source electrode. A chip surface electrode is formed over the low-dielectric-constant polymer film and the source electrode, and connected to a ground potential. The source electrode is provided with a ground potential through the chip surface electrode.
申请公布号 US2004108556(A1) 申请公布日期 2004.06.10
申请号 US20030724056 申请日期 2003.12.01
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KUNII TETSUO;HATTORI RYO;KAWATA HIROSHI
分类号 H01L29/417;H01L23/31;H01L23/367;H01L23/48;H01L23/482;H01L25/07;H01L25/18;(IPC1-7):H01L29/76 主分类号 H01L29/417
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