发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a semiconductor substrate having one principal plane on which a plurality of electrodes are formed. A film which is made of polymer with a low dielectric constant is formed over the gate and drain electrodes so as to insulate the gate and drain electrodes from the source electrode. A chip surface electrode is formed over the low-dielectric-constant polymer film and the source electrode, and connected to a ground potential. The source electrode is provided with a ground potential through the chip surface electrode. |
申请公布号 |
US2004108556(A1) |
申请公布日期 |
2004.06.10 |
申请号 |
US20030724056 |
申请日期 |
2003.12.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUNII TETSUO;HATTORI RYO;KAWATA HIROSHI |
分类号 |
H01L29/417;H01L23/31;H01L23/367;H01L23/48;H01L23/482;H01L25/07;H01L25/18;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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