| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus is provided to prevent the damage of a back film and the contamination of a polishing pad by uniformly forming the back film along a wafer including a flat zone. CONSTITUTION: A CMP apparatus is provided with a head, a back film(203) installed on the lower surface of the head for performing the buffering operation against the pressure of the head and supplying the suction for a wafer(207), and a polishing pad for polishing a polishing object layer of the wafer. At this time, the back film has a predetermined size for completely covering the wafer. Preferably, the back film has the same shape as the wafer.
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