SEMICONDUCTOR MEMORY DEVICE AND ITS DATA WRITING METHOD, IN WHICH MEMORY CELL INCLUDES VARIABLE RESISTOR

摘要

PURPOSE: A semiconductor memory device and its data writing method are provided to erase data per memory cell and to write data at a high speed and in a high accuracy. CONSTITUTION: A memory array(50) includes a plurality of nonvolatile semiconductor memory cells(10). A gate electrode(21) of each memory cell is connected to word lines(WL00-WL0n-1) respectively. A variable resistor(30) connected to a drain area of each memory cell is connected to bit lines(BL00-BL0n-1) respectively. The memory cells are arranged in a matrix. Each memory cell in the memory array is selected by a control voltage applied to each word line and each bit line. Data is written to the selected memory cell, or is erased or read from the selected memory cell.