| 发明名称 |
LIGHT EMITTING DIODE HAVING LOW RESISTANCE LAYER |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a kind of transmission structure for increasing transmission conductivity of a light emitting diode and eliminating the need for altering the thickness of an epitaxial layer. <P>SOLUTION: The structure of a diode has a low resistance structure of p-type or n-type region wherein the operating voltage of the device is lowered and power is increased by deceasing the equivalent resistance of the p-type or n-type region. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004165433(A) |
申请公布日期 |
2004.06.10 |
| 申请号 |
JP20020329569 |
申请日期 |
2002.11.13 |
| 申请人 |
SANEN KODEN KOFUN YUGENKOSHI |
发明人 |
CHIN RYUKEN;RAN BUNKO;KAN HONIN |
| 分类号 |
H01L33/04;H01L33/12;H01L33/32 |
主分类号 |
H01L33/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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