PROCESS FOR GROWING COMPOUND SEMICONDUCTOR EPITAXIALLY AND PROCESS FOR FABRICATING LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial growing process of a compound semiconductor capable of producing a compound semiconductor crystal having a good crystal quality.

SOLUTION: In the process for epitaxially growing a III-V compound semiconductor containing nitrogen in a group V element by metal organic vapor phase epitaxy, the III-V compound semiconductor is heat treated in nitrogen atmosphere following to epitaxial growth in hydrogen atmosphere.

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