发明名称 |
Manufacturing method of semiconductor integrated circuit device |
摘要 |
Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern 28B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor substrate by multiple-exposure thereof. The second mask pattern 28B has a main light transferring pattern 26c1, a plurality of auxiliary light transferring patterns 26c2 disposed thereabout, and a phase shifter S disposed in the main light transferring pattern 26c1. The auxiliary light transferring patterns 26c2 are disposed such that respective distances from a center of each thereof to a center of the main light transferring pattern 26c1 are substantially equal. With this arrangement, a densely disposed pattern is transferred with sufficient process transfer margin. |
申请公布号 |
US2004110095(A1) |
申请公布日期 |
2004.06.10 |
申请号 |
US20030623849 |
申请日期 |
2003.07.22 |
申请人 |
IMAI AKIRA;HAYANO KATSUYA;HASEGAWA NORIO |
发明人 |
IMAI AKIRA;HAYANO KATSUYA;HASEGAWA NORIO |
分类号 |
G03F1/08;G03F1/00;G03F1/14;G03F1/30;G03F1/32;G03F1/68;G03F7/20;H01L21/02;H01L21/027;H01L21/311;H01L21/8242;H01L27/108;(IPC1-7):G03C5/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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