发明名称 PLASMA TREATMENT APPARATUS AND METHOD USING TEMPERATURE CONTROL PART
摘要 PURPOSE: A plasma treatment apparatus and method are provided to prevent the influence of heat on a dielectric part and to perform simultaneously plasma processing of high quality by using a temperature control part. CONSTITUTION: A plasma treatment apparatus(100) includes a vacuum chamber, a dielectric part, a plate, and a temperature control part. The vacuum chamber stores a process object body and performs plasma processing on the process object body under a vacuum or reduced pressure atmosphere. The dielectric part(17) transmits microwaves to the vacuum chamber and sustains the vacuum or reduced pressure atmosphere of the vacuum chamber. The plate(16) includes a slot for guiding the microwaves to the dielectric part. The temperature control part(22) includes a cooling path between the plate and the dielectric part. The temperature control part is used for controlling the temperature of the dielectric part.
申请公布号 KR20040048838(A) 申请公布日期 2004.06.10
申请号 KR20030086759 申请日期 2003.12.02
申请人 CANON KABUSHIKI KAISHA 发明人 NAKAYAMA TOMIO;ODA HIROHISA;ISHIHAMA HITOSHI;KURAMOCHI KAZUMICHI;TAKAHASHI JUNYA
分类号 C23C16/511;H01J37/32;H01L21/02;H01L21/205;H01L21/3065;(IPC1-7):H01L21/02 主分类号 C23C16/511
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