发明名称 |
PLASMA TREATMENT APPARATUS AND METHOD USING TEMPERATURE CONTROL PART |
摘要 |
PURPOSE: A plasma treatment apparatus and method are provided to prevent the influence of heat on a dielectric part and to perform simultaneously plasma processing of high quality by using a temperature control part. CONSTITUTION: A plasma treatment apparatus(100) includes a vacuum chamber, a dielectric part, a plate, and a temperature control part. The vacuum chamber stores a process object body and performs plasma processing on the process object body under a vacuum or reduced pressure atmosphere. The dielectric part(17) transmits microwaves to the vacuum chamber and sustains the vacuum or reduced pressure atmosphere of the vacuum chamber. The plate(16) includes a slot for guiding the microwaves to the dielectric part. The temperature control part(22) includes a cooling path between the plate and the dielectric part. The temperature control part is used for controlling the temperature of the dielectric part.
|
申请公布号 |
KR20040048838(A) |
申请公布日期 |
2004.06.10 |
申请号 |
KR20030086759 |
申请日期 |
2003.12.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NAKAYAMA TOMIO;ODA HIROHISA;ISHIHAMA HITOSHI;KURAMOCHI KAZUMICHI;TAKAHASHI JUNYA |
分类号 |
C23C16/511;H01J37/32;H01L21/02;H01L21/205;H01L21/3065;(IPC1-7):H01L21/02 |
主分类号 |
C23C16/511 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|