| 发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means of manufacturing a nitride semiconductor element or substrate which has an anisotropic grating constant in a (0001) crystal pane. <P>SOLUTION: The nitride semiconductor substrate or element structure having the anisotropic grating constant in the (0001) crystal plane is manufactured by partially reducing or applying grating distortion by periodically arraying crystal defects in the element structure. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004165550(A) |
申请公布日期 |
2004.06.10 |
| 申请号 |
JP20020331901 |
申请日期 |
2002.11.15 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KAWAGUCHI YASUTOSHI;ISHIBASHI AKIHIKO;YOKOGAWA TOSHIYA |
| 分类号 |
H01L21/205;H01L33/06;H01L33/16;H01L33/32;H01L33/34;H01L33/44;H01S5/323;H01S5/343 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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