MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD OF SOLID STATE IMAGING DEVICE, AND SCREENING METHOD FOR SOLID STATE IMAGING DEVICES

摘要

PROBLEM TO BE SOLVED: To remove metal contamination of a substrate in the semiconductor substrate used for the manufacture of a semiconductor device of the manufacture or the like of a solid state imaging device, i.e. the manufacture of a silicon epitaxial substrate. SOLUTION: The manufacturing method of the semiconductor substrate has a process for ion-implanting an element of the same group as silicon, preferably, carbon 32 to a silicon substrate 1 in the state that the impurity level of Mo of an ion implantation device is 2.4×109atoms/cm2or less, forming an impurity implantation region 34 for gettering, and forming the silicon epitaxial layer 2 on the surface of the silicon substrate 1. COPYRIGHT: (C)2004,JPO